NUCLEAR-MAGNETIC-RESONANCE STUDIES OF AMORPHOUS DEUTERATED SILICON-NITRIDE THIN-FILMS

Amorphous hydrogenated/deuterated silicon nitride (a-SiN:H,D) thin fil ms were studied by deuteron magnetic resonance (DMR), DMR spectra show two quadrupolar broadened Fake type doublets with splittings of 65.4 kHz for Si-D, and 154 kHz for N-D bonds; the ratio of these DMR double t cusp-splittings (Delta(N-D)/Delta(Si-D) = 2.35) is, to within experi mental error, equal to the ratio of the squares of the respective bond -stretching frequencies ((omega(N-D)/omega(Si-D))(2) = 2.36), as deter mined by analysis of Fourier transform infrared spectra. The center fr equencies of the Si-D and N-D DMR doublets are not coincident, but rat her are shifted by similar to 2 kHz, indicating that the Si-D and N-D groups are interacting, and must therefore be near-neighbors in the am orphous network. This explanation consistent with an interpretation of the shifts in bond-stretching frequencies of IR modes that occur when Si-(H)D and N-(H)D modes are found in the same film.