HYDROGEN INCORPORATION IN DEVICE-QUALITY A-SI-H DEPOSITED AT LOW-TEMPERATURE

Authors
ZELLAMA K NEDIALKOVA L BOUNOUH Y CHAHED L BENLAHSEN M ZEINERT A PARET V THEYE ML
Citation
K. Zellama et al., HYDROGEN INCORPORATION IN DEVICE-QUALITY A-SI-H DEPOSITED AT LOW-TEMPERATURE, Journal of non-crystalline solids, 200, 1996, pp. 81-84
Citations number
9
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
200
Year of publication
1996
Part
1
Pages
81 - 84
Database
ISI
SICI code
0022-3093(1996)200:<81:HIIDAD>2.0.ZU;2-9
Abstract
The nature of H bonding and its influence on the optoelectronic proper ties of device-quality glow-discharge a-Si:H deposited at 50 degrees C using high dilution of SiH4 in H-2 are investigated by H evolution an d annealing experiments, The results give clear evidence for H incorpo ration modes very different from those in standard low temperature a-S i:H.