DUAL-BEAM AND TRANSIENT INFRARED STIMULATED PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON AT 4.2 K

Authors
FRITZSCHE H HECK S STRADINS P
Citation
H. Fritzsche et al., DUAL-BEAM AND TRANSIENT INFRARED STIMULATED PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON AT 4.2 K, Journal of non-crystalline solids, 200, 1996, pp. 153-156
Citations number
6
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
200
Year of publication
1996
Part
1
Pages
153 - 156
Database
ISI
SICI code
0022-3093(1996)200:<153:DATISP>2.0.ZU;2-3
Abstract
Dual beam photoconductivity with band gap bias light and superposed st eps of 0.4 less than or equal to h nu less than or equal to 0.6 eV inf rared light was measured in intrinsic and p-type hydrogenated amorphou s silicon (a-Si:H) at 4.2 K. For tail state electrons, an absorption c ross-section, A(e) = 1.8 X 10(-17) cm(2). and a recombination volume, upsilon(e) = 1.6 X 10(-18) cm(3) were obtained. For holes, A(h) = A(e) /3 and upsilon(e) approximate to upsilon(h).