PRECISE MEASUREMENT OF THE DEEP DEFECTS AND SURFACE-STATES IN A-SI-H FILMS BY ABSOLUTE CPM

Authors
FEJFAR A PORUBA A VANECEK M KOCKA J
Citation
A. Fejfar et al., PRECISE MEASUREMENT OF THE DEEP DEFECTS AND SURFACE-STATES IN A-SI-H FILMS BY ABSOLUTE CPM, Journal of non-crystalline solids, 200, 1996, pp. 304-308
Citations number
15
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
200
Year of publication
1996
Part
1
Pages
304 - 308
Database
ISI
SICI code
0022-3093(1996)200:<304:PMOTDD>2.0.ZU;2-R
Abstract
The newly introduced setup for 'absolute' constant photocurrent method allows measurement of the optical (photocurrent) absorption spectrum, alpha(E), directly in absolute units (cm(-1)) without additional cali bration and undisturbed by interference fringes, Computer simulation w as performed to demonstrate the precision of the measurement and to ex plain residual interferences sometimes observed. The residual interfer ences are shown to be direct fingerprints of an inhomogeneous defect d istribution.