PREPARATION AND PROPERTIES OF A-GE1-XNX

The study of the preparation and properties of Ge1-xNx alloys is repor ted. The samples were prepared by magnetron sputtering of poly Ge with a mixture of Ar and N-2, and the nitrogen content was changed by the gas ratio, r = [N-2]/([N-2] + [Ar]). The optical gap and nitrogen cont ent increase appreciably above r similar to 0.5 with increasing r. Ram an scattering spectra show two characteristic peaks around 250 and 750 cm(-1) which are ascribed to the Ge-Ge TO mode and to Ge-N mode, resp ectively. Electron spin resonance spectra suggest that two kinds of ce nters exist; one is a Ge dangling bond and the other is a nitrogen-rel ated dangling bond. The electron spin resonance spin density of the Ge dangling bond gradually increases with increasing r, while the linewi dth and g-shift decrease. These results are discussed in comparison wi th a-Si1-xNx.