SHORT-LASER-PULSE AND STEADY-LIGHT INDUCED DEGRADATION OF INTRINSIC, P-TYPE AND COMPENSATED A-SI-H

Degradation of the same hydrogenated amorphous silicon (a:Si:H) sample s with short laser pulses (30 ns) and steady bandgap light (CW) reveal s that the kinetics is different for pulses and CW. For pulse degradat ion the kinetics depends on doping. Particularly in doped samples puls es degrade the photoconductivity, sigma(p), much more than CW light fo r the same increase in light-induced defects, N-D. The lack of correla tion between sigma(p) and N-D suggests that other metastable structura l changes besides defects are induced by bandgap light.