L. Mariucci et al., DENSITY-OF-STATES AND PHOTOCONDUCTIVITY LIGHT DEGRADATION IN A-SI-H AT DIFFERENT TEMPERATURES, Journal of non-crystalline solids, 200, 1996, pp. 482-485
We have studied the light degradation process of a-Si:H at different t
emperatures monitoring the defect density and the photoconductivity. O
ur data are not in complete agreement with die predictions of the two
most widely accepted models (the recombination induced bond breaking m
odel and the stretched exponential one). We show that our experiments
can be well interpreted by a model in which the creation rate is propo
rtional to the square of the photoconductivity and in which the anneal
ing rate is computed considering a distribution of energy barriers and
it is enhanced by the degradation light.