LIGHT-SOAKING IN A-SIC-H FILMS GROWN BY PECVD IN UNDILUTED AND HYDROGEN DILUTED SIH4-MIXTURES(CH4 GAS)

Amorphous silicon carbon alloys having an energy gap in the range 2.0- 2.5 eV were deposited by plasma enhanced chemical vapor deposition (PE CVD) from undiluted and hydrogen diluted SIH4 + CH4 mixtures. The opto electronic and compositional properties of the samples were measured. Light soaking till saturation was performed on the samples and the eff ect on defect densities and photoconduction was investigated For both the diluted and undiluted sets of samples. The dilution in hydrogen of the gas mixtures produces samples with higher carbon incorporation, l ower defect density and a lower degradation of the optoelectronic prop erties under light soaking.