Hm. Branz et al., STRUCTURAL MEMORY MODEL OF SLOW DEFECT RELAXATION IN HYDROGENATED AMORPHOUS-SILICON, Journal of non-crystalline solids, 200, 1996, pp. 535-539
Structural memory is a model of the timescales and energetics of defec
t structural relaxation after carrier capture in an amorphous solid. I
n this paper, an outline of the theory is given and the energetics of
relaxation and the various pathways for carrier re-emission are discus
sed in detail. In the model, bond angle relaxation is rapid (picosecon
ds) after carrier capture as it is at most crystalline defects. Howeve
r, complete structural relaxation at higher neighbors is far slower an
d can be reversible under some conditions. The structural memory model
provides a physically reasonable, quantitative, explanation of recent
anomalous transient capacitance data in hydrogenated amorphous silico
n.