COMPOSITIONAL, OPTOELECTRONIC AND STRUCTURAL-PROPERTIES OF AMORPHOUS SILICON-NITROGEN ALLOYS DEPOSITED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

High quality amorphous silicon nitrogen films with energy gap in the r ange of 1.9-3.2 eV have been deposited by plasma enhanced chemical vap or deposition in silane and ammonia gas mixtures. Compositional, struc tural, electrical and optical properties have been investigated reveal ing good semiconducting features comparable to those of amorphous sili con-carbon films. Advantages such as high deposition rate have been ob served making a-SiNx:H-y a promising material for optoelectronic techn ology.