CRYSTALLOGEOMETRY OF POLYMORPHIC TRANSITIONS IN SILICON UNDER PRESSURE

Authors
BLANK VD KULNITSKIY BA
Citation
Vd. Blank et Ba. Kulnitskiy, CRYSTALLOGEOMETRY OF POLYMORPHIC TRANSITIONS IN SILICON UNDER PRESSURE, High pressure research, 15(1), 1996, pp. 31-42
Citations number
10
Categorie Soggetti
Physics
Journal title
High pressure research → ACNP
ISSN journal
08957959
Volume
15
Issue
1
Year of publication
1996
Pages
31 - 42
Database
ISI
SICI code
0895-7959(1996)15:1<31:COPTIS>2.0.ZU;2-T
Abstract
Under shear deformation direct transitions SiI --> SiIV --> SiIII are observed; orientation relationships (OR) between phases have been dete rmined for these transitions. It is shown, that the complete set of OR between phases SiI and SiIV contains six variants. On the basis of th e obtained experimental data, a P-T-gamma-diagram has been constructed for Si, that allows to explain phase transitions characteristics at t emperatures T < O, 3T (melting).