S. Tian et al., THE EFFECT OF DOSE-RATE ON ION-IMPLANTED IMPURITY PROFILES IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 144-147
In this paper is reported a systematic study of the effect of dose rat
e (ion beam current) on ion implanted impurity profiles in single-crys
tal silicon. A close examination of the effect of dose rate on as-impl
anted profiles reveals that for both boron and arsenic implantation, f
or beam currents ranging from 0.4 mA to 12 mA, dose rate has a small b
ut clearly observable effect on channeling tails with higher beam curr
ents producing shallower profiles, The effect is greater for on-axis (
0 degrees tilt/0 degrees rotation) implants than for off-axis (8-9 deg
rees tilt/30 degrees rotation) implants. Lower mass (boron) implants h
ave a more significant dose rate effect than do higher mass (arsenic)
implants.