THE EFFECT OF DOSE-RATE ON ION-IMPLANTED IMPURITY PROFILES IN SILICON

Authors
TIAN S YANG SH MORRIS S PARAB K TASCH AF KAMENITSA D REECE R FREER B SIMONTON RB MAGEE C
Citation
S. Tian et al., THE EFFECT OF DOSE-RATE ON ION-IMPLANTED IMPURITY PROFILES IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 144-147
Citations number
12
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
112
Issue
1-4
Year of publication
1996
Pages
144 - 147
Database
ISI
SICI code
0168-583X(1996)112:1-4<144:TEODOI>2.0.ZU;2-Y
Abstract
In this paper is reported a systematic study of the effect of dose rat e (ion beam current) on ion implanted impurity profiles in single-crys tal silicon. A close examination of the effect of dose rate on as-impl anted profiles reveals that for both boron and arsenic implantation, f or beam currents ranging from 0.4 mA to 12 mA, dose rate has a small b ut clearly observable effect on channeling tails with higher beam curr ents producing shallower profiles, The effect is greater for on-axis ( 0 degrees tilt/0 degrees rotation) implants than for off-axis (8-9 deg rees tilt/30 degrees rotation) implants. Lower mass (boron) implants h ave a more significant dose rate effect than do higher mass (arsenic) implants.