DYNAMIC MONTE-CARLO SIMULATION OF NONLINEAR DAMAGE GROWTH DURING ION-IMPLANTATION OF CRYSTALLINE SILICON

We report a simple and efficient algorithm to calculate the growth of damage in Si within the framework of a recently developed Monte Carlo code for the simulation of ion implantation in crystals. We let the de fects created by the incoming ions interact, during the simulation, wi th the damage previously accumulated. We assume this dynamical interac tion to depend both on defect generation density and concentration of pre-existing damage. Preliminary comparison of calculations with exper imental data in the case of Si samples implanted with 700 keV N+ ions shows that this scheme can well reproduce the observed non-linearities in the growth behavior.