MOLECULAR-DYNAMICS STUDY OF THE FLUENCE DEPENDENCE OF SI SPUTTERING BY 1 KEV AR+ IONS

Authors
RUBIO JE MARQUES LA PELAZ L JARAIZ M BARBOLLA J
Citation
Je. Rubio et al., MOLECULAR-DYNAMICS STUDY OF THE FLUENCE DEPENDENCE OF SI SPUTTERING BY 1 KEV AR+ IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 156-159
Citations number
13
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
112
Issue
1-4
Year of publication
1996
Pages
156 - 159
Database
ISI
SICI code
0168-583X(1996)112:1-4<156:MSOTFD>2.0.ZU;2-7
Abstract
The fluence dependence of the Si sputtering by 1 keV Ar+ has been stud ied by molecular dynamics simulations. To this purpose, previously amo rphized samples with different initial argon concentration have been i on bombarded and the sputtered atoms have been analyzed. The calculate d sputtering yield increases with the argon content according to the e xperimental results. The mechanisms involved in this sputtering enhanc ement are discussed.