KINETICS OF IMPURITY GETTERING ON BURIED DEFECTS CREATED BY MEV ARGONIMPLANTATION

High energy argon ion implantation was used to form, in intentionally gold or platinum contamined silicon samples, a buried layer of efficie nt gettering sinks with low damage creation close to the surface. In a ny case, the implantation temperature was chosen to avoid partial or c omplete amorphization. Both nature and long term stability of these ce nters have been determined by Transmission Electron Microscopy (TEM) a nd channeling measurements. The kinetics of gold accumulation on these sinks was measured using high sensitivity Rutherford Backscattering ( RBS) analysis as a function of implantation dose and annealing tempera ture. The effect of initial metallic contamination concentration was a lso investigated. The results are discussed using a model which takes into account a trapping-detrapping reaction and an impurity dependent annealing behaviour of the gettering sites.