INFLUENCE OF SAMPLE THICKNESS ON CARRIER LIFETIME MODIFICATION INDUCED BY 4 MEV PROTON IMPLANTATION IN SILICON

Authors
BIRO LP GYULAI J KHANH NQ TUTTO P
Citation
Lp. Biro et al., INFLUENCE OF SAMPLE THICKNESS ON CARRIER LIFETIME MODIFICATION INDUCED BY 4 MEV PROTON IMPLANTATION IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 173-176
Citations number
7
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
112
Issue
1-4
Year of publication
1996
Pages
173 - 176
Database
ISI
SICI code
0168-583X(1996)112:1-4<173:IOSTOC>2.0.ZU;2-A
Abstract
Low dose irradiation with 4 MeV protons was used for lifetime modifica tion in Si. The depth dependence of the induced effect was investigate d by Microwave Photoconductive Decay (mu-PCD) technique. By adopting a special sample structure it was possible to distinguish effects on li fetime caused by implantation defects and by carrier diffusion in the undamaged Si underneath. Limits are given when mu-PCD is applied to me asure lifetime changes set by deep implants.