ULTRA-SHALLOW JUNCTION FORMATION IN SILICON USING ION-IMPLANTATION

Authors
TASCH AF BANERJEE SK
Citation
Af. Tasch et Sk. Banerjee, ULTRA-SHALLOW JUNCTION FORMATION IN SILICON USING ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 177-183
Citations number
24
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
112
Issue
1-4
Year of publication
1996
Pages
177 - 183
Database
ISI
SICI code
0168-583X(1996)112:1-4<177:UJFISU>2.0.ZU;2-Y
Abstract
Extensive studies have been conducted in the semi-empirical and physic ally-based Monte Carlo modeling of low energy As, BF2, and B implants into (100) silicon as a function of energy, implant angle, dose, and d ose rate. In addition, these models are believed to provide reasonable predictions for the damage profiles. We have fabricated ultra-shallow (60 nm) P+/N junctions by low energy (5 keV) BF2 implantation into Si , in which the implant dose rare (in addition to dose and energy) is o ptimized, followed by multi-step rapid thermal annealing (RTA).