THE CHEMICAL FACTOR AND ITS INFLUENCE ON THE FORMATION OF DEFECT STRUCTURES AND THEIR GETTERING PROPERTIES IN LAYERS OF SILICON IMPLANTED WITH CHEMICAL-ACTIVE IONS

Authors
ALESHIN AN ENISHERLOVA KL KALININ AA MORDKOVICH VN
Citation
An. Aleshin et al., THE CHEMICAL FACTOR AND ITS INFLUENCE ON THE FORMATION OF DEFECT STRUCTURES AND THEIR GETTERING PROPERTIES IN LAYERS OF SILICON IMPLANTED WITH CHEMICAL-ACTIVE IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 184-187
Citations number
7
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
112
Issue
1-4
Year of publication
1996
Pages
184 - 187
Database
ISI
SICI code
0168-583X(1996)112:1-4<184:TCFAII>2.0.ZU;2-F
Abstract
It has been established that the formation of defect structure (precip itates or secondary defects) in FZ silicon implanted with chemical-act ive ions (carbon ions and their combination with ions of oxygen) with doses up to 3 X 10(15) cm(-2), during high-temperature (1200 degrees C ) post annealing and gettering properties of these defect structure ar e governed by the carbon-oxygen chemical interaction.