ION-IMPLANTED SILICIDES STUDIES BY FREQUENCY NOISE-LEVEL MEASUREMENTS

Silicides belong to a very promising group of materials which are of g reat interest both in the physics of thin films and in microelectronic s. Their low resistivity and good temperature stability are used for f abrication of reliable and reproducible contacts. Investigations of th is type of contacts include both their experimental development and th e development of methods for their characterization. Noise level measu rements are one of the most sensitive methods for the evaluation of th e quality of obtained silicides for contacts on the semiconductors. Th is method is directly oriented on the electrical noise, and, therefore are more advantageous than other methods for silicide characterizatio n. This paper presents the study of arsenic ion implantation and seque ntial thermal annealing effects on the frequency noise level character istics of TiN/Ti and Pd contacts on Si.