THE EFFECT OF RAPID THERMAL TREATMENTS ON THE FORMATION OF SHALLOW JUNCTIONS BY IMPLANTING BORON AND BF2+ IONS INTO (100)SILICON THROUGH A PROTECTING MASK

Authors
KAABI L REMAKI B GONTRAND C LO PF BALLAND B
Citation
L. Kaabi et al., THE EFFECT OF RAPID THERMAL TREATMENTS ON THE FORMATION OF SHALLOW JUNCTIONS BY IMPLANTING BORON AND BF2+ IONS INTO (100)SILICON THROUGH A PROTECTING MASK, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 196-200
Citations number
21
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
112
Issue
1-4
Year of publication
1996
Pages
196 - 200
Database
ISI
SICI code
0168-583X(1996)112:1-4<196:TEORTT>2.0.ZU;2-B
Abstract
The effect of rapid thermal annealing (RTA) on the formation of shallo w p(+)/n junctions by the implantation of boron (B-11(+)) and boron di fluoride (BF2+ ions into SiO2/Cz-(100) Si systems have been studied. T he junction formation by various implant conditions have been investig ated to correlate with initial dopant drive-in efficiency, defects in junctions, and junction depth under different anneal experimental cond itions. Boron and fluorine concentrations versus depth profiles before and after annealing have been measured using secondary ion mass spect rometry (SIMS). Results indicate that boron diffusion in the BF2+ case is widely reduced during rapid thermal treatments. Discussions of thi s are based on the effect of both knocked-on oxygen and fluorine on th e boron diffusion kinetics.