STRUCTURAL DEFECTS IN SIMOX

Authors
STOEMENOS J
Citation
J. Stoemenos, STRUCTURAL DEFECTS IN SIMOX, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 206-213
Citations number
49
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
112
Issue
1-4
Year of publication
1996
Pages
206 - 213
Database
ISI
SICI code
0168-583X(1996)112:1-4<206:SDIS>2.0.ZU;2-C
Abstract
The sources of the defects in the Si-overlayer and the SiO2 buried lay er which are produced during high dose oxygen implantation and anneali ng treatment are discussed. These defects are related with the signifi cant differences in the formation of thermally grown oxide and the bur ied oxide (BOX) in SIMOX. Trapping of Si in the BOX results in the for mation of Si-islands and strained Si-Si bonds. Stacking fault (SF) com plexes are formed during the high temperature annealing at the back si de of the Si-overlayer due to the dissolution of the SiO2 precipitates .