SELF-STRUCTURING OF BURIED SIO2 PRECIPITATE LAYERS DURING IBS - A COMPUTER-SIMULATION

Computer simulations of Ostwald ripening during the annealing of low-d ose implanted SIMOX wafers are presented. For this aim, we developed a new model, which allows the simulation of Ostwald ripening of infinit e buried layers of precipitates. Under appropriate conditions, Ostwald ripening leads to a spatial self-structuring of these precipitate ens embles. The structures, found by computer simulations, are very simila r to experimentally observed precipitate patterns. The characteristic wavelength of the structures was found to be proportional to the diffu sional screening length of the precipitate ensemble. Based on our comp uter simulations we predict a new fabrication method for a buried ''na nopipe'' of SiO2, filled with silicon.