IMPROVED CHARACTERIZATION OF FULLY-DEPLETED SOI WAFERS BY PSEUDO-MOS TRANSISTOR

Authors
IONESCU AM CRISTOLOVEANU S WILSON SR RUSU A CHOVET A SEGHIR H
Citation
Am. Ionescu et al., IMPROVED CHARACTERIZATION OF FULLY-DEPLETED SOI WAFERS BY PSEUDO-MOS TRANSISTOR, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 228-232
Citations number
4
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
112
Issue
1-4
Year of publication
1996
Pages
228 - 232
Database
ISI
SICI code
0168-583X(1996)112:1-4<228:ICOFSW>2.0.ZU;2-0
Abstract
The pseudo-MOS transistor technique is used for quick, quasi-non destr uctive evaluation and comparison of several types of SOI wafers: SIMOX from different origins and wafer bonding. The effective mobility for electrons and holes, threshold voltages, film doping, interface state density and series resistances are extracted as a function of probes p ressure (15-50 g). The form factor of the pseudo-MOS is accurately eva luated by comparison with four-point probe measurement taking into acc ount the correction induced by series resistances.