CHARACTERIZATION OF HYDROGENATED AMORPHOUS-SILICON PREPARED BY ION-BEAM-ASSISTED EVAPORATION

Authors
ZOUBIR NH RINNERT H VERGNAT M MARCHAL G BURNEAU A
Citation
Nh. Zoubir et al., CHARACTERIZATION OF HYDROGENATED AMORPHOUS-SILICON PREPARED BY ION-BEAM-ASSISTED EVAPORATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 263-266
Citations number
8
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
112
Issue
1-4
Year of publication
1996
Pages
263 - 266
Database
ISI
SICI code
0168-583X(1996)112:1-4<263:COHAPB>2.0.ZU;2-E
Abstract
Hydrogenated amorphous silicon thin films were deposited by electron c yclotron resonance microwave plasma assisted evaporation. This paper s hows the influence of substrate temperature on the hydrogen bonding, w hich was characterized by infrared spectrometry and thermal desorption spectrometry experiments.