P. Desgardin et al., BEAM SCANNING SYSTEM FOR THE UNIFORMITY OF IMPLANTED DOSES IN A LARGE-AREA, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 267-269
In order to improve the uniformity of the deposit dose (MeV) ion-irrad
iated samples, a specific ion beam system has been developed. This sys
tem allows us to irradiate samples with different types of scanning (L
issajous, raster scan, circular raster scan) at different sweeping fre
quencies. This set-up permits to obtain irradiations with a dose varia
tion less than 1.5% over the sample with a diameter up to 10 cm. The s
ystem is presently devoted to lifetime control in semiconductors.