HE IMPLANT-DAMAGE ISOLATION OF MOVPE GROWN GAAS INCAP/INCAASP LAYERS/

He-4(+) has been implanted in MOVPE grown GaAs/InGaP/InGaAsP layers to obtain damage-isolation. The electrical properties and the thermal lo ng-term stability of the implanted regions have been investigated. Mul ti-energy implantation was performed to form the high resistance layer s. The sheet resistance of the implanted GaAs/InGaP/InGaAsP samples wa s determined by current-voltage measurements after 30 s rapid thermal annealing in the temperature range of 200-600 degrees C. High resistan ce regions (similar to 10(9) Omega/square) are created in the GaAs/InG aP/InGaAsP layers. The resistance exhibits a flat maximum after anneal ing in the temperature range between 300 and 450 degrees C. The sheet resistance of the implanted regions was measured to determine the depe ndence on aging time at 100 degrees C and 250 degrees C. It was stable for the duration of 100 h. Range parameters such as the projected ran ge and the projected standard deviation in InGaP were experimentally d etermined as a function of energy.