ION-IMPLANTATION INDUCED DAMAGE IN RELAXED SI0.75GE0.25

The damage produced by implanting, at room temperature, a 3 mu m thick relaxed Si0.75Ge0.25 layer with 2 MeV Si+ ions has been measured as a function of dose in the range 10(10)-10(15) cm(-2). Depth profiles of the damage have been obtained by both Rutherford Backscattering Spect rometry and Optical Reflectivity Depth Profiling. These measurements s how that the levels of damage exceed both those predicted by TRIM and those observed for comparable implantations into Si. Deep Level Transi ent Spectroscopy of a sample implanted with 10(11) Si cm(-2) reveals t he presence of both a majority and a minority carrier trap and another minority carrier trap is detected by Minority Carrier Transient Spect roscopy. An Electron Paramagnetic Resonance signal with isotropic g va lue of 2.011 +/- 0.001 is detected in samples implanted with greater t han or equal to 3 X 10(13) Sicm(-2) and is attributed to both Si and G e dangling bonds.