STRUCTURAL STUDIES OF ION-BEAM SYNTHESIZED SIGE SI HETEROSTRUCTURES FOR HBT APPLICATIONS/

Authors
CRISTIANO F NEJIM A HOPE DAO HOULTON MR HEMMENT PLF
Citation
F. Cristiano et al., STRUCTURAL STUDIES OF ION-BEAM SYNTHESIZED SIGE SI HETEROSTRUCTURES FOR HBT APPLICATIONS/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 311-315
Citations number
24
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
112
Issue
1-4
Year of publication
1996
Pages
311 - 315
Database
ISI
SICI code
0168-583X(1996)112:1-4<311:SSOISS>2.0.ZU;2-S
Abstract
Si/Si1-xGex/Si heterostructures which are potentially suitable for HBT fabrication have been synthesised by implanting Ge+ ions into a Si(10 0) substrate upon which a Si overlayer was deposited, followed by Si+- induced post-amorphization and low temperature Solid Phase Epitaxial G rowth. RBS and TEM investigations have shown that the Ge induced end-o f-range (EOR) defects are annihilated during regrowth, as well as exte nded defects observed in some C+ co-implanted samples, resulting in go od crystalline structures.