INVESTIGATION OF THE DAMAGE-INDUCED BY 200 KEV GE-IMPLANTATION IN 6H-SIC( ION)

Authors
PACAUD Y SKORUPA W PEREZRODRIGUEZ A BRAUER G STOEMENOS J BARKLIE RC
Citation
Y. Pacaud et al., INVESTIGATION OF THE DAMAGE-INDUCED BY 200 KEV GE-IMPLANTATION IN 6H-SIC( ION), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 321-324
Citations number
5
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
112
Issue
1-4
Year of publication
1996
Pages
321 - 324
Database
ISI
SICI code
0168-583X(1996)112:1-4<321:IOTDB2>2.0.ZU;2-4
Abstract
Investigations of damage induced by 200 keV Ge+ ion implantation into 6H-SiC have been carried out to characterize 3 different levels of dam age in respect of the irradiation dose. Up to now, mainly vacancy-type defects and dislocations have been identified. High diffusion of defe cts, and chemical disorder in amorphized layer, have been observed in this study.