ION-BEAM SYNTHESIS OF BETA-SIC AT 950-DEGREES-C AND STRUCTURAL CHARACTERIZATION

Authors
FRANGIS N NEJIM A HEMMENT PLF STOEMENOS J VANLANDUYT J
Citation
N. Frangis et al., ION-BEAM SYNTHESIS OF BETA-SIC AT 950-DEGREES-C AND STRUCTURAL CHARACTERIZATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 325-329
Citations number
20
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
112
Issue
1-4
Year of publication
1996
Pages
325 - 329
Database
ISI
SICI code
0168-583X(1996)112:1-4<325:ISOBA9>2.0.ZU;2-G
Abstract
The structure of beta-SiC formed by carbon implantation into Si at hig h temperatures (850-950 degrees C) at doses ranging between 0.2 X 10(1 8) to 1 X 10(18) cm(-2) at 200 keV, was studied by combined cross sect ion and high resolution transmission electron microscopy (XTEM and HRT EM). Implantation was performed on (001) and (111) Si wafers. In both cases a buried beta-SiC layer was formed having the same orientation a s the Si matrix.