ION-BEAM-ASSISTED RECRYSTALLIZATION OF SIC SI STRUCTURES/

The analysis of ion beam induced epitaxial crystallization (IBIEC) of SiC/Si structures obtained by high dose C ion implantation into amorph ous Si (preamorphized by Ge ion implantation) has been performed by FT IR, Raman scattering, TEM and RES measurements. The data obtained show the formation of an amorphous SIC layer on the amorphous Si at succes sive Ge and C ion implantations in crystalline Si. During IBIEC proces sing, the Si amorphous region below the implanted layer recrystallizes epitaxially. However, in the carbon implanted layer polynucleation oc curs, forming a nanocrystalline SIC layer. The epitaxial crystallizati on stops when the recrystallization front reaches the carbon implantat ion tail. Finally, Raman measurements show the presence of some residu al amorphous phase, likely related to the surface and intergrain regio ns.