A STUDY ON THE METALLIZATION AND STABILIZATION OF POROUS SILICON

Rhenium was deposited in porous silicon by Chemical Vapour Infiltratio n and Deposition (CVID) using a deuterium rhenium carbonyl DRe(CO)(5) precursor. The results indicate that the precursor penetrates into the pores and reaches a saturation level very quickly (in less than 2 min ) to give a uniform rhenium concentration of 8-10 at% of the silicon c ontent to a measurable depth of at least 1.5 mu m. High levels of oxyg en were also observed at similar to SiO1.5. In addition to having a hi gh level of carbon at about one third of the oxygen level, the carbon content of the samples dropped during analysis, suggesting that it was present in a volatile form.