LIGHT-ION INDUCED DAMAGE IN CDTE AND HG(1-X)CD(X)TE EPITAXIAL THIN-FILMS

Authors
RUSSO SP JOHNSTON PN ELLIMAN RG JAMIESON DN
Citation
Sp. Russo et al., LIGHT-ION INDUCED DAMAGE IN CDTE AND HG(1-X)CD(X)TE EPITAXIAL THIN-FILMS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 113(1-4), 1996, pp. 218-222
Citations number
25
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
113
Issue
1-4
Year of publication
1996
Pages
218 - 222
Database
ISI
SICI code
0168-583X(1996)113:1-4<218:LIDICA>2.0.ZU;2-S
Abstract
The effect of variation of MCT stoichiometry (x) on the damage induced by 2 MeV He ions has been measured by the comparison of damage accumu lation in Hg0.48Cd0.52Te (MCT, x = 0.52) and CdTe (MCT, x = 1). The co mparison of damage induced by irradiation in the random and channeled directions for MCT (x = 0.52) by 2 MeV He ions has also been measured. The results extend earlier work on light ion damage induced in MCT ep itaxial thin films.