A. Heft et al., DAMAGE PRODUCTION AND ANNEALING OF ION-IMPLANTED SILICON-CARBIDE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 113(1-4), 1996, pp. 239-243
Samples of 6H-SiC were implanted with Ga+ and Sb+ ions in a wide dose
range (10(13) to 10(16) cm(-2)) at various target temperatures (-190 d
egrees C to 1200 degrees C). Short-time annealing was performed at tem
peratures from 600 degrees C to 1750 degrees C. The as-implanted and a
nnealed samples were analyzed by means of the RBS-channeling technique
, XTEM and optical measurements. The results show that amorphization c
an be prevented for implantation temperatures greater than or equal to
300 degrees C; from 500 degrees C to 800 degrees C minimum damage con
centrations are obtained. Annealing of amorphous layers is quite diffi
cult and non-perfect, no monocrystalline state was found up to tempera
tures of 1720 degrees C. Weakly damaged layers produced by a low dose
(< 1 X 10(14) cm(-2)) at room temperature regrow perfectly at 1200 deg
rees C. Residual damage after high-dose implantation (greater than or
equal to 1 X 10(15) cm(-2)) at elevated temperatures cannot be removed
completely by annealing.