DAMAGE PRODUCTION AND ANNEALING OF ION-IMPLANTED SILICON-CARBIDE

Samples of 6H-SiC were implanted with Ga+ and Sb+ ions in a wide dose range (10(13) to 10(16) cm(-2)) at various target temperatures (-190 d egrees C to 1200 degrees C). Short-time annealing was performed at tem peratures from 600 degrees C to 1750 degrees C. The as-implanted and a nnealed samples were analyzed by means of the RBS-channeling technique , XTEM and optical measurements. The results show that amorphization c an be prevented for implantation temperatures greater than or equal to 300 degrees C; from 500 degrees C to 800 degrees C minimum damage con centrations are obtained. Annealing of amorphous layers is quite diffi cult and non-perfect, no monocrystalline state was found up to tempera tures of 1720 degrees C. Weakly damaged layers produced by a low dose (< 1 X 10(14) cm(-2)) at room temperature regrow perfectly at 1200 deg rees C. Residual damage after high-dose implantation (greater than or equal to 1 X 10(15) cm(-2)) at elevated temperatures cannot be removed completely by annealing.