DAMAGE IN SEMICONDUCTOR-MATERIALS DURING HEAVY-ION ELASTIC RECOIL DETECTION ANALYSIS

Heavy-Ion Elastic Recoil Detection Analysis (HIERDA) is an analytical technique which has undergone rapid development in the past few years with the availability of high-energy Tandem accelerators for materials science applications. HIERDA has found application in the study of va rious semiconductor systems, particularly III-V compounds. The techniq ue employs a high-energy heavy-ion analysing beam to eject constituent nuclei from the target material and a time of flight and energy (ToF- E) detector system to extract mass and depth of origin information fro m these recoiling nuclei. The present work examines the sample damage produced in semiconductor materials under typical analysis conditions. The depth distribution of damage induced by an I-127 analysing beam o f varying energy (54-98 MeV) and dose, in GaAs and Si has been examine d using RBS channelling and cross-sectional TEM. Channelling Contrast Microscopy (CCM) of the sample edge has been undertaken using a scanni ng proton microprobe.