GLANCING INCIDENT MEV ION-BEAMS FOR TOTAL-REFLECTION PIXE (TPIXE) ANDRBS SURFACE-ANALYSIS

Authors
Citation
Ja. Vankan et Rd. Vis, GLANCING INCIDENT MEV ION-BEAMS FOR TOTAL-REFLECTION PIXE (TPIXE) ANDRBS SURFACE-ANALYSIS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 113(1-4), 1996, pp. 373-377
Citations number
9
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
ISSN journal
0168583X
Volume
113
Issue
1-4
Year of publication
1996
Pages
373 - 377
Database
ISI
SICI code
0168-583X(1996)113:1-4<373:GIMIFT>2.0.ZU;2-O
Abstract
In a total reflection geometry at small incident angles phi (0-35 mrad ), MeV proton and alpha beams were used to analyse Au and Cu layers on flat quartz substrates by detection of X-rays and backscattered proto ns. The reflected proton beams were detected as a function of incident angle phi. An improved model for theoretical X-ray yield calculations is developed. These calculations showed that a proton beam of 2.5 MeV will be totally reflected from a Au atomic surface layer at an incide nt angle smaller than 8 mrad. At these small angles the backscattered protons and alpha particles show a pattern which indicates atomic laye r depth resolution.