BORON LOCALIZATION IN SILICON, AN APPLICATION OF NUCLEAR-REACTION CHANNELING FOR MATERIALS ANALYSIS

Boron trace concentrations of 100 ppm were localised in single crystal line and as-grown silicon by combining the channelling technique with nuclear reaction analysis (NRA). Angular scans were performed in the [ 100] and [110] directions on silicon, using the B-11(p, alpha)2 alpha reaction with an incident proton energy of 700 keV. For the evaluation , the stopping power and ion flux distributions in the silicon crystal were simulated using the Monte Carlo code MABIC [1]. The projected bo ron concentrations of the two scans were used to calculate a three-dim ensional impurity concentration distribution. Boron was found to be lo cated substitutional, as well as on well-defined interstitial sites in the silicon crystal lattice.