We discuss two examples of the application of non-isothermal plasma CV
D for the design of novel nanocrystalline/amorphous composite material
s. It is shown that the electronic and mechanical properties of the ma
terials undergo dramatic change when the crystallite size decreases be
low 10 nm where the localization phenomena of charge carriers and phon
ons commence: The probability of the phonon assisted radiative recombi
nation of the carriers increases resulting in an efficient photolumine
scence from nanocrystalline silicon. The mechanical strength of nc-MeN
(x)/a-Si3N4 composites increases far above the values of the single co
mponents. In both cases, a small crystallite size of less than or equa
l to 2 nm, sharp interfaces free of dangling and weak bonds and an app
ropriate thickness of the amorphous matrix are needed. So far, only pl
asma CVD appears to be able to meet these stringent requirements.