INDUCTION PLASMA SYNTHESIS OF ULTRAFINE SIC

Authors
Citation
F. Gitzhofer, INDUCTION PLASMA SYNTHESIS OF ULTRAFINE SIC, Pure and applied chemistry, 68(5), 1996, pp. 1113-1120
Citations number
52
Categorie Soggetti
Chemistry
Journal title
ISSN journal
00334545
Volume
68
Issue
5
Year of publication
1996
Pages
1113 - 1120
Database
ISI
SICI code
0033-4545(1996)68:5<1113:IPSOUS>2.0.ZU;2-D
Abstract
Induction plasma synthesis of ultrafine powders has been studied using different precursors, different plasma torch configurations and injec tion conditions. The long residence time available in the r.f. plasma, as well as the high temperature are necessary conditions for decompos ition in the vapor phase of the injected species. High cooling rates o f the plasma gas in the condensation region of the reactor guarantees homogeneous nucleation of SiC or doped SiC with limited heterogeneous nucleation by the reactor wall. Heat and mass transfer in the r.f. ind uction plasma have been intensively studied both experimentally and th eoretically with the developement of reliable numerical models. The sy nthesis of SiC in the induction plasma can benefit from these data to design the reactors. Many parametric studies have shown that it is pos sible to influence and maintain SiC UFP quality. Solid elemental Si as a starting material is a promising avenue for UFP SiC synthesis.