PLASMA DEPOSITION OF AMORPHOUS-SILICON ALLOYS FROM FLUORINATED GASES

Plasma deposition of a-SiGe, a-SiC and a-SiN alloys starting from fluo rinated precursors is overviewed. The growth chemistries are examined on the basis of a unique chemisorption model. Some aspects on the role of F atoms in controlling the gas surface interactions and in determi ning the material properties are also evidenced.