PLANAR ANISOTROPY IN AMORPHOUS-SEMICONDUCTORS

Theoretical work has been carried out towards the planar (non-axial) a nisotropy in amorphous semiconductors. The spontaneous polarization (P -s) vector seems to move into the plane leaving the axial characters. The work has been done in zero and non-zero electric field modes. Exis tence of easy, hard axes and the existence of cones have been demonstr ated. In the case of cones, P-s vector seems, under certain conditions , to have jumps of first order giving first-order polarization (FOP). This leads to switching mechanism of the P-s vector from a critical va lue to saturation. This switching mechanism of the P-s vector from a c ritical value to saturation. This switching mechanism can be predicted as well. Some experimental evidence of internal electric fields in a- Si:H can be demonstrated.