A COMPLEX LUMINESCENT DEFECT IN BE-DOPED OXYGEN-RICH SILICON

A photoluminescence (PL) study of oxygen-rich (CZ) silicon subject to beryllium ion implantation and subsequent annealing is reported. A cha racteristic bound exciton luminescence spectrum is observed with a nar row zero-phonon line at 1137.98(5) meV, denoted Be-A, accompanied by a vibrational sideband extending for more than 200 meV from the zero-ph onon line and containing lattice- and defect-related vibrational modes . The spectrum is not observed in oxygen-lean, float zone (FZ) silicon except where beryllium and oxygen are co-implanted. The response of t he luminescence system to external perturbations such as temperature, uniaxial stress and magnetic fields are reported. The defect structure is found to have rhombic I symmetry and the absence of any splitting in a magnetic field indicates that the line is a magnetic singlet. The data are interpreted in the context of a pseudodonor model.