GROWTH LAW OF SILICON-OXIDES BY DRY OXIDATION

A theoretical description of the kinetic mechanism of thermal oxidatio n in silicon is proposed by complementing the Deal-Grove model. The re lationship of the classical linear-parabolic growth law is generalized to the logarithmic growth law which provides a complete description f or the whole regime of oxide films. In particular, the enhanced oxidat ion rate in the thin regime may be attributed to the diffusion length, which is characterized by the difference between the activation energ ies of the diffusion process and the reaction process. Our fitting of the logarithmic growth law to several experimental results shows excel lent agreement and the fitting parameters also provide activation ener gies of 1.50 and 2.49 eV for the interfacial reaction and diffusion in oxide respectively.