The growth of a thin liquid film surrounded by gas pocket(s), undergoi
ng absorption with a zero-order chemical reaction, has been simulated
by an apt mathematical model in order to study the influence of variou
s parameters involved. The solution has been obtained semianalytically
using Goodman's integral method and solving the resulting differentia
l equation by a fourth-order Runge-Kutta numerical integration algorit
hm. The computations reveal the strong dependence of film growth on re
action rate, diffusivity, and molar volume whereas the effect of gas-p
ocket volume and initial film thickness are moderate.