OPTIMIZATION OF THE GROWTH-RATE OF ELECTROCHROMIC WO3 COATINGS, IN-SITU GROWN BY CHEMICAL-VAPOR-DEPOSITION AT ATMOSPHERIC-PRESSURE

Citation
D. Gogova et al., OPTIMIZATION OF THE GROWTH-RATE OF ELECTROCHROMIC WO3 COATINGS, IN-SITU GROWN BY CHEMICAL-VAPOR-DEPOSITION AT ATMOSPHERIC-PRESSURE, Renewable energy, 8(1-4), 1996, pp. 546-550
Citations number
6
Categorie Soggetti
Energy & Fuels
Journal title
ISSN journal
09601481
Volume
8
Issue
1-4
Year of publication
1996
Pages
546 - 550
Database
ISI
SICI code
0960-1481(1996)8:1-4<546:OOTGOE>2.0.ZU;2-W
Abstract
Electrochromic WO3 thin films on ITO-covered glass substrates are grow n by Atmospheric Pressure Chemical Vapor Deposition (APCVD) using W(CO )6 as precursor. The process is pyrolytical decomposition of W(CO)6 in the presence of oxygen gas atmosphere. The growth rate was found to d epend strongly on the oxygen flow-rate, as well as on the argon flow-r ate through the precursor chamber. The optimization of these process p arameters leads to high growth rates in the order of 30 Angstrom/sec. Structural studies by Reflection High Energy Electron Diffraction (RHE ED) and SEM show that the films are polycrystalline WO3 with a certain degree of texturing.