UV IRRADIATION EFFECTS IN AL CHEMICAL-VAPOR-DEPOSITION ON TITANIUM NITRIDE

UV irradiation effects on Al chemical vapor deposition on titanium nit ride (TiN) was investigated by using dimethylaluminum hydride at 150 d egrees C. Al films grew thermally at a rate of 6.3 nm/min, while the U V light generated by a deuterium lamp reduced the rate to 5.2 nm/min. When TiN surfaces were oxidized, Al films started to grow only under U V irradiation. Using x-ray photoelectron spectroscopy (XPS), we showed that the adsorbates formed on the oxidized surfaces could be dissocia ted only when the UV light was irradiated. The XPS results also sugges ted involvement of photoinduced desorption in reducing the growth rate . (C) 1996 American Institute of Physics.