UV irradiation effects on Al chemical vapor deposition on titanium nit
ride (TiN) was investigated by using dimethylaluminum hydride at 150 d
egrees C. Al films grew thermally at a rate of 6.3 nm/min, while the U
V light generated by a deuterium lamp reduced the rate to 5.2 nm/min.
When TiN surfaces were oxidized, Al films started to grow only under U
V irradiation. Using x-ray photoelectron spectroscopy (XPS), we showed
that the adsorbates formed on the oxidized surfaces could be dissocia
ted only when the UV light was irradiated. The XPS results also sugges
ted involvement of photoinduced desorption in reducing the growth rate
. (C) 1996 American Institute of Physics.