(GA,MN)AS - A NEW DILUTED MAGNETIC SEMICONDUCTOR-BASED ON GAAS

Authors
OHNO H SHEN A MATSUKURA F OIWA A ENDO A KATSUMOTO S IYE Y
Citation
H. Ohno et al., (GA,MN)AS - A NEW DILUTED MAGNETIC SEMICONDUCTOR-BASED ON GAAS, Applied physics letters, 69(3), 1996, pp. 363-365
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
69
Issue
3
Year of publication
1996
Pages
363 - 365
Database
ISI
SICI code
0003-6951(1996)69:3<363:(-ANDM>2.0.ZU;2-9
Abstract
A new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepar ed by molecular beam epitaxy. The lattice constant of (Ga,Mn)As films was determined by x-ray diffraction and shown to increase with the inc rease of Mn composition, x. Well-aligned in-plane ferromagnetic order was observed by magnetization measurements. Magnetotransport measureme nts revealed the occurrence of anomalous Hall effect in the (Ga,Mn)As layer. (C) 1996 American Institute of Physics.