STRUCTURAL INVESTIGATION OF SHORT-PERIOD GAINAS INP SUPERLATTICES/

Structural properties of short period GaInAs/InP superlattices prepare d by organometallic vapor phase epitaxy are investigated with Raman sc attering. The observation of as many as five orders of folded longitud inal acoustic doublers attests to the structural quality of the superl attices. Well and barrier relative layer thicknesses and superlattice period are estimated from analysis of doubler intensity and position, respectively. Examination of the optic modes reveals that the well is comprised of two separate layers: a GaInAsP layer under tension near t he barrier/well interface and a GaInAs layer under compression near th e well/barrier interface. Finally, the Raman results are confirmed by simulation of double crystal x-ray diffraction spectra from the short period structures. (C) 1996 American institute of Physics.