EFFECTS OF FINITE DRAIN VOLTAGE AND FINITE-TEMPERATURE ON COHERENT RESONANT TRANSPORT IN SINGLE-ELECTRON TUNNELING REGIME

Effects of a finite drain voltage and a finite temperature on coherent transport in the single electron tunneling regime are investigated fo r a novel quantum dot structure defined by two shallow etched trenches and two line Schottky gates. A regular amplitude modulation of Coulom b blockade oscillations is observed and attributed to coherent resonan t transport. Increasing drain voltage disturbs the amplitude modulatio n more significantly than raising the temperature. This is explained i n terms of the effects of nonmonochromatic electrons on the interferen ce condition. (C) 1996 American Institute of Physics.