ATOMIC-FORCE MICROSCOPY OF SELENIUM SULFIDE PASSIVATED GAAS (100) SURFACE

Authors
KURUVILLA BA DATTA A SHEKHAWAT GS SHARMA AK VYAS PD GUPTA RP KULKAMI SK
Citation
Ba. Kuruvilla et al., ATOMIC-FORCE MICROSCOPY OF SELENIUM SULFIDE PASSIVATED GAAS (100) SURFACE, Applied physics letters, 69(3), 1996, pp. 415-417
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
69
Issue
3
Year of publication
1996
Pages
415 - 417
Database
ISI
SICI code
0003-6951(1996)69:3<415:AMOSSP>2.0.ZU;2-#
Abstract
Surface structure studies of GaAs(100) with and without chemical passi vation have been made using atomic force microscopy (AFM). Passivation was carried out using a solution of SeS2 which has proved to be a suc cessful passivating agent as seen from the increase in the photolumine scence (PL) intensity. Atomic force microscopy results indicate that i t is possible to obtain ordered surface layers on GaAs using SeS2. (C) 1996 American Institute of Physics.